HT Semiconductor mmbta13 free download

File name mmbta13.pdf

MMBTA13,14 TRANSISTOR (NPN) FEATURES SOT-23 Darlington Amplifier Unit : mm Marking : MMBTA13:K2D; MMBTA14:K3D 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC Collector Power Dissipation 300 mW RJA Thermal Resistance Junction to Ambient 417 /W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 100uA, IB=0 30 V Collector-emitter breakdown voltage V(BR)EBO IE= 100A, IC=0 10 V Collector cut-off current ICBO* VCB=30 V , IE=0 0.1 A Emitter cut-off current IEBO* VEB= 10V , IC=0 0.1 A VCE=5V, IC= 10mA MMBTA13 5000 hFE(1) * MMBTA14 10000 DC current gain VCE=5V, IC= 100mA MMBTA13 10000 hFE(2) * MMBTA14 20000 Collector-emitter saturation voltage VCE (sat)* IC=100mA, IB=0.1mA 1.5 V